LL4448

SMALL SIGNAL

SWITCHING DIODES

Features

Mechanical Data

· Silicon epitaxial planar diode

· Fast switching diodes

· 500mW power dissipation

· This diode is also available in the DO-35 case with

the type designation 1N4448

· Case: MiniMELF glass case (DO-35)

· Weight: Approx. 0.05 gram

Maximum Ratings And Electrical Characteristics

Electrical characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbol

Value

Units

Average rectified current, Half wave rectification with

mA

℃

-65 to +175

Storage temperature range

℃

Reverse Voltage

Volts

75

500

Junction temperature

175

mA

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Peak Reverse Voltage

Volts

100

mW

Ptot

Symbols

Units

Leakage current

nA

μA

μA

Min.

Thermal resistance, junction to Ambient

Typ.

Max.

25

5

50

4

K/W

Forward voltage

V

V

0.72

1

pF

4

ns

trr

1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

Reverse breakdown voltage tested with 100μA Pulse

V

100

0.45

η

Dimensions in inches and (millimeters)

MELF (DO-35)

0.146(3.70)

0.130(3.30)

0.020(0.50)

0.011(0.28)

SOLDERABLE ENDS

0.063(1.60)

0.051(1.30)