BAT60J

4/5

0

25

50

75

100

125

150

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

Tj(

°C)

IR[Tj] / IR[Tj=25

°C]

VR=8V

Fig. 6: Reverse leackage current versus junction

temperature (typical values).

110

10

100

VR(V)

C(pF)

F=1MHz

Tj=25

°C

Fig. 7: Junction capacitance versus reverse voltage

applied (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

1E-1

1E+0

1E+1

VFM(V)

IFM(A)

Tj=150

°C

(Typical values)

Tj=80

°C

(Typical values)

Tj=25

°C

(Maximum values)

Fig. 8-1: Forward voltage drop versus forward cur-

rent (High level).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VFM(V)

IFM(A)

Tj=150

°C

(Typical values)

Tj=25

°C

(Maximumvalues)

Tj=80

°C

(Typical values)

Fig. 8-2: Forward voltage drop versus forward cur-

rent (Low level).

0

1020

304050

607080

90

100

100

150

200

250

300

350

400

450

500

550

600

S(Cu) (mm )

Rth(j-a) (

°C/W)

IF=0.75A

Fig. 9: Thermal resistance junction to ambient ver-

sus copper surface (epoxy printed circuit board FR4,

copper thickness: 35

µm).