BC847 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

420

330

oC/W

• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCE =30 V

Tamb =150

µA

V(BR)CES

∗ Collector-Emitter

Breakdown Volt age

(VBE =0)

IC =10

µA50

V(BR)CBO

∗ Collector-Base

Breakdown Volt age

(IE =0)

IC =10

µA50

V(BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =2 mA

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IC =10

µA6

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =10 mA

IB =0.5 mA

IC =100 mA

IB =5 mA

0. 09

0.2

0.25

0.6

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =10 mA

IB =0.5 mA

IC =100 mA

IB =5 mA

0. 75

0.9

VBE(on)

∗ Base-Emitter On

Voltage

IC =2 mA

VCE =5 V

IC =10 mA

VCE =5 V

0.58

0. 63

0.7

0.77

hFE

∗

DC Current G ain

IC =10

µAVCE =5 V

IC =2 mA

VCE = 5 V

200

150

290

450

Transit ion F requency

IC =10 mA VCE = 5 V f = 100MHz

300

MHz

CCB

Collect or Base

Capacitance

IE =0

VCB =10 V

f = 1 MHz

4.5

CEB

Collector Emitter

Capacitance

IC =0

VEB =0.5 V

f =1 MHz

Noise Figure

VCE =5 V

IC =0.2 mA

f = 1KHz

∆f = 200 Hz RG =2 KΩ

210

hie

∗

Input Impedance

VCE =5 V

IC = 2 mA

f = 1KHz

3. 2

4.5

8.5

Ω

hre

∗

Reverse Voltage Ratio

VCE =5 V

IC =2 mA

f = 1KHz

-4

hfe

∗

Small Signal Current

Gain

VCE =5 V

IC = 2 mA

f = 1KHz

330

hoe

∗

Output Admittance

VCE =5 V

IC = 2 mA

f = 1KHz

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

BC847

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