BCP53 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rthj-tab

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Collecor Tab

Max

62.5

oC/W

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -30 V

Tj = 125

-100

-10

µA

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -100

µA

for BCP52

for BCP53

-60

-100

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -20 mA

for BCP52

for BCP53

-60

-80

V(BR)CER

Collector-Emitter

Breakdown Voltage

(RBE = 1 K

Ω)

IC = -100

µA

for BCP52

for BCP53

-60

-100

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IC = -10

µA

-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -500 mA

IB = -50 mA

-0.5

VBE(on)

∗ Base-Emitter On

Voltage

IC = -500 mA

VCE = -2 V

-1

hFE

∗

DC Current Gain

IC = -5 mA

VCE = -2 V

IC = -150 mA

VCE = -2 V for Gr. 6

IC = -150 mA

VCE = -2 V for Gr. 10

IC = -150 mA

VCE = -2 V for Gr. 16

IC = -500 mA

VCE = -2 V

100

160

250

Transition Frequency

IC = -10 mA VCE = -5 V

f = 35 MHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

BCP52/53

2/4

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