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BGY43 데이터시트(PDF) 4 Page - NXP Semiconductors |
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BGY43 데이터시트(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() 1996 Jun 06 4 Philips Semiconductors Product specification VHF power amplifier module BGY43 CHARACTERISTICS ZS = ZL = 50 Ω; VS1 = VS2 = 12.5 V; f = 148 to 174 MHz; Th = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IQ1 leakage current PD = 0 − 5 − mA IQ2 leakage current PD = 0 − 15 − mA PD input drive power PL = 13 W − 80 150 mW η efficiency PL = 13 W 40 48 − % H2 second harmonic −25 −34 − dBc H3 third harmonic −25 −34 − dBc VSWRin input VSWR with respect to 50 Ω − 1 : 1.5 − Fig.3 Circuit diagram. handbook, full pagewidth MGE660 +VS1 +VS2 3 1 R.F. input 2 4 DRIVER P.A. 5 7 6 R.F. output |
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