Page <2>

V1.1

17/09/19

General Purpose Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Electrical Characteristics (T

a = 25°C unless otherwise specified)

*PulseCondition:PulseWidth300μs,DutyCycle2%.

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Units

Collector Emitter Voltage

V

CEO

I

C = 2mA, IB = 0

45

-

-

V

Emitter Base Voltage

V

EBO

I

E = 100µA, IC = 0

6

-

-

Collector Cut off Current

I

CES

V

CE = 50V, VBE = 0

V

CE = 50V, VBE = 0,

T

a = 125°C

-

-

15

4

nA

µA

DC Current Gain

h

FE

I

C = 2mA, VCE = 50V

200

290

460

-

Collector Emitter Saturation Voltage

V

CE (sat)

I

C = 10mA, IB = 0.5mA

I

C = 100mA, IB = 5mA*

-

0.07

0.2

0.2

0.6

V

Base Emitter Saturation Voltage

V

BE (sat)

I

C = 10mA, IB = 0.5mA

I

C = 100mA, IB = 0.5mA*

-

0.6

0.83

1.05

Base Emitter On Voltage

V

BE (on)

I

C = 100µA, VCE = 5V

I

C = 2mA, VCE = 5V

I

C = 100mA, VCE = 5V*

0.55

0.5

0.62

0.83

0.7

Dynamic Characteristics

TransitionFrequency

f

T

I

C = 0.5mA, VCE = 3V

f = 100MHz

I

C = 10mA, VCE = 5V

f = 100MHz

-

150

100

200

-

MHz

Collector Output Capacitance

C

ob

V

CB = 10V, IE = 0 f =

1MHz

-

-

4.5

pF

Emitter Input Capacitance

C

ib

V

EB = 0.5V, IE = 0

f = 1MHz

-

8

Noise Figure

NF

V

CE = 5V, IC = 2mA

Rs = 2kW, f = 1kHz

F = 200Hz

-

2

10

dB