BDW94C datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

1.56

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-of f

Current (IE =0)

for BDW94B

VCB =80 V

for BDW93C/94C

VCB = 100 V

Tcase = 150

for BDW94B

VCB =80 V

for BDW93C/94C

VCB = 100 V

100

µA

ICEO

Collector Cut-of f

Current (IB =0)

for BDW94B

VCE =80 V

for BDW93C/94C

VCE = 100 V

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =5 V

VCEO(s us)

∗ Collector-Emitter

Sustaining Volt age

(IB =0)

IC = 100 mA

for BDW94B

for BDW 93C/94C

100

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =5 A

I B =20 mA

IC =10 A

I B = 100 mA

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC =5 A

I B =20 mA

IC =10 A

I B = 100 mA

2. 5

hFE

∗

DC Current G ain

IC =3 A

VCE =3 V

IC =5 A

VCE =3 V

IC =10 A

VCE =3 V

1000

750

100

20K

VF*

Parallel-diode Forward

Voltage

IF =5 A

IF =10 A

1.3

1.8

hfe

SmallSignalCurrent

Gain

IC =1 A

VCE =10 V

f= 1 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BDW93C/BDW94B/BDW94C

2/6

BDW94C 데이터시트(PDF) 2 Page - STMicroelectronics

BDW94C 데이터시트(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6

데이터시트 다운로드

링크 URL