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TMP708-Q1

SBOS828 – DECEMBER 2016

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Copyright © 2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage

Supply, VCC

–0.3

6

V

Input, SET and HYST

–0.3

VCC + 0.3

Output, OT

–0.3

6

Current

Input

20

mA

Output

20

Temperature

Operating, TA

–40

125

°C

Junction, TJ

150

Storatge, Tstg

–65

150

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1)

±4000

V

Charged-device model (CDM), per AEC Q100-011

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2.7

5.5

V

TA

Operating temperature

0

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TMP708-Q1

UNIT

DBV (SOT-23)

5 PINS

RθJA

Junction-to-ambient thermal resistance

217.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

86.3

°C/W

RθJB

Junction-to-board thermal resistance

44.6

°C/W

ψJT

Junction-to-top characterization parameter

4.4

°C/W

ψJB

Junction-to-board characterization parameter

43.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W