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GW30N90D 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 GW30N90D
상세설명  N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

GW30N90D 데이터시트(HTML) 5 Page - STMicroelectronics

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STGW30N90D
Electrical characteristics
5/10
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj=25°C (see Figure 2)
29
11
1820
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
27
14
1580
ns
ns
A/µs
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 2)
90
275
312
ns
ns
ns
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
150
336
592
ns
ns
ns
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon (1)
Eoff
(2)
Ets
1.
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2.
Turn-off losses include also the tail of the collector current
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 900V, IC = 20A
RG=10Ω, VGE= 15V,
Tj= 25°C (see Figure 2)
1660
4438
6096
µJ
µJ
µJ
Eon (1)
Eoff
(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 900V, IC = 20A
RG=10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
3015
6900
9915
µJ
µJ
µJ
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vf
Forward on-voltage
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
1.9
1.7
2.5
V
V
trr
Qrr
Irrm
Reverse recovery time
Reverse recovery charge
Reverse recovery current
If = 20A, VR = 27V,
Tj = 125°C, di/dt = 100A/µs
(see Figure 5)
152
722
9
ns
nC
A



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