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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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D1557 데이터시트(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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D1557 데이터시트(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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2 / 6 page  D1557 电特性 (Tc=25℃) 项 目 符 号 测试条件 最小值 最大值 单位 集电极—基极击穿电压 V(BR)CBO IC=1mA, IE=0 1500 - V 发射极—基极击穿电压 V(BR)EBO IE=400mA, IC=0 6 - V 集电极—基极反向漏电流 ICBO VCB=1500V, IE=0 - 1 mA 发射极—基极反向漏电流 IEBO VEB=5V, IC=0 66 200 mA hFE(1) VCE=5V, IC=1A 8 28 直流电流增益 hFE(2) VCE=5V, IC=5A 5 - 集电极—发射极饱和压降 VCE(sat) IC=5.5A, IB=1.38A - 1 V 基极—发射极饱和压降 VBE(sat) IC=5.5A, IB=1.38A - 1 V 阻尼二极管正向压降 -VF IF=5.5A - 2 V 下降时间 tf IC=5.5A,2IB1=-IB2=2.4A fH=15.75KHz - 0.8 μS 贮存时间 ts IC=5.5A,2IB1=-IB2=2.4A fH=15.75KHz - 8 μS 特征频率 fT VCE=10V, IC=0.1A 1 - MHz 版本:604A 2/6 |
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