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BSX20 데이터시트(PDF) 1 Page - STMicroelectronics |
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BSX20 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect or-Base Voltage (IE =0) 40 V VCES Collect or-Emitt er Voltage (VBE =0) 40 V VCEO Collect or-Emitt er Voltage (IB =0) 15 V VEBO Emitt er-Base Voltage (IC =0) 4.5 V IC Collect or Current (t = 10 µs) 0.5 A Ptot Total Dissipation at Tamb ≤ 25 oC at Tcase ≤ 25 oC 0.36 1.2 W W Tstg St orage Temperature -65 t o 200 oC Tj Max. Operating Junction Temperature 200 oC TO-18 1/6 |
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