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BTB04 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 BTB04
상세설명  SENSITIVE GATE TRIACS
PDF  5 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BTB04 데이터시트(HTML) 2 Page - STMicroelectronics

  BTB04 Datasheet HTML 1Page - STMicroelectronics BTB04 Datasheet HTML 2Page - STMicroelectronics BTB04 Datasheet HTML 3Page - STMicroelectronics BTB04 Datasheet HTML 4Page - STMicroelectronics BTB04 Datasheet HTML 5Page - STMicroelectronics  
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GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°C/W
Rth (j-c) DC Junction to case for DC
BTA
4.4
°C/W
BTB
3.2
Rth (j-c) AC Junction to case for 360
° conduction angle
( F= 50 Hz)
BTA
3.3
°C/W
BTB
2.4
Symbol
Test Conditions
Quadrant
Suffix
Unit
TD
S
A
IGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-II I
MAX
5
5
10
10
mA
IV
MAX
5
10
10
25
VGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj=110
°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
Tj=25
°C
I-II-III-IV
TYP
2
µs
IL
IG= 1.2 IGT
Tj=25
°C
I-III-IV
TYP
10
10
20
20
mA
II
20
20
40
40
IH *IT= 100mA gate open
Tj=25
°C
MAX
15
15
25
25
mA
VTM *ITM= 5.5A tp= 380µs
Tj=25
°C
MAX
1.65
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
°C
MAX
0.01
mA
Tj=110
°C
MAX
0.75
dV/dt *
Linear
slope
up
to
VD=67%VDRM
gate open
Tj=110
°C
TYP
10
10
-
-
V/
µs
MIN
-
-
10
10
(dV/dt)c *
(dI/dt)c = 1.8A/ms
Tj=110
°C
TYP
1
1
5
5
V/
µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) =1W
PGM = 40W (tp = 20 µs)
IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA04 T/D/S/A / BTB04 T/D/S/A
2/5



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