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CSD19535KCS.B 데이터시트(PDF) 3 Page - Texas Instruments

부품명 CSD19535KCS.B
상세설명  CSD19535KCS 100V N-Channel NexFET™ Power MOSFET
PDF  13 Pages
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제조업체  TI2 [Texas Instruments]
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CSD19535KCS.B 데이터시트(HTML) 3 Page - Texas Instruments

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4 Specifications
4.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0V, ID = 250μA
100
V
IDSS
Drain-to-Source Leakage Current
VGS = 0V, VDS = 80V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0V, VGS = 20V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250μA
2.2
2.7
3.4
V
RDS(on)
Drain-to-Source On-Resistance
VGS = 6V, ID = 100A
3.4
4.4
mΩ
VGS = 10V, ID = 100A
3.1
3.6
mΩ
gfs
Transconductance
VDS = 10V, ID = 100A
274
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0V, VDS = 50V, ƒ = 1MHz
6100
7930
pF
Coss
Output Capacitance
1160
1500
pF
Crss
Reverse Transfer Capacitance
29
38
pF
RG
Series Gate Resistance
1.4
2.8
Ω
Qg
Gate Charge Total (10V)
VDS = 50V, ID = 100A
78
101
nC
Qgd
Gate Charge Gate to Drain
13
nC
Qgs
Gate Charge Gate to Source
25
nC
Qg(th)
Gate Charge at Vth
16
nC
Qoss
Output Charge
VDS = 40V, VGS = 0V
196
nC
td(on)
Turn On Delay Time
VDS = 50V, VGS = 10V,
IDS = 100A, RG = 0Ω
32
ns
tr
Rise Time
15
ns
td(off)
Turn Off Delay Time
60
ns
tf
Fall Time
5
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 100A, VGS = 0V
0.9
1.1
V
Qrr
Reverse Recovery Charge
VDS= 50V, IF = 100A,
di/dt = 300A/μs
421
nC
trr
Reverse Recovery Time
89
ns
4.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance
0.5
°C/W
RθJA
Junction-to-Ambient Thermal Resistance
62
www.ti.com
CSD19535KCS
SLPS484C – JANUARY 2014 – REVISED MAY 2024
Copyright © 2024 Texas Instruments Incorporated
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Product Folder Links: CSD19535KCS



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