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V1.0

16/09/19

Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Absolute Maximum Ratings:

Collector-Base Voltage, VCBO

: 60V

Collector-Emitter Voltage, VCEO

: 60V

Emitter-Base Voltage, VEBO

: 6V

Continuous Collector Current, IC

: 30mA

Total Device Dissipation (TA = +25°C), PD

: 500mW

Derate above 25°C

: >3.33mW/°C

Total Device Dissipation (TC = +25°C), PD

: 1.8W

Derate above 25°C

: 12mW/°C

Operating Junction Temperature Range, TJ

: -65°C to +200°C

Storage Temperature Range, Tstg

: -65°C to +200°C

Collector-Emitter Breakdown Voltage

V(br)ceo

Ic = 10mA, Ib = 0, Note 1

45

-

V

Collector-Base Breakdown Voltage

V(br)cbo

Ic = 10μA, Ie = 0

80

-

Emitter-Base Breakdown Voltage

V(br)ebo

Ie = 10μA, Ic = 0

6

-

Collector Cut-off Current

Icbo

Vcb = 45V, Ie = 0

-

2

nA

Emitter Cut-Off Current

Iebo

Veb = 5V, Ic = 0

-

2

Parameter

Symbol

Test Conditions

Min.

Max.

Unit

OFF Characteristics

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Note 1. Pulse Test: Pulse Width <= 300μs, Duty Cycle <= 2%.

Description:

A Widely used “Industry Standard” silicon NPN transistor in a TO-18 type case designed for

applications such as medium-speed switching and amplifiers from audio to VHF frequencies.