| 전자부품 데이터시트 검색엔진 |
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BU407 데이터시트(PDF) 2 Page - STMicroelectronics |
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BU407 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.08 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 70 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE =330 V VCE =200 V VCE =200 V Tcase = 100 oC 5 100 1 mA µA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 6 V 1 mA VCE(sat) ∗ Collector-emitter Saturation Voltage IC = 5 A IB = 0.5 A 1 V VBE(sat) ∗ Base-emitter Saturation Voltage IC = 5 A 1.2 V fT Transition-Frequency IC = 1 A VCE = 5 V f = 1 MHz 10 16 MHz toff ∗∗ Turn-off Time IC = 5 A IBend = 0.5 A 0.75 µs Is/b Second Breakdown Collector Current VCE = 40 V t = 10 ms 4 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. BU407 2/4 |
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