isc N-Channel MOSFET Transistor

STP120N10F4

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V; ID= 0.25mA

100

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 100V; VGS= 0V

--

--

1

μ

A

IGSS

Gate-Body Leakage Current

VGS=±20V;VDS= 0V

--

--

±

100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 250μA

2.0

--

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 60A

--

--

10

mΩ

VSD

Forward On-Voltage

IS= 60A; VGS= 0V

--

--

1.2

V

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