© 2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BAS19 Rev. 1.1

2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

PD

Power Dissipation

350

mW

RθJA

Thermal Resistance, Junction-to-Ambient

357

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

VR

Breakdown Voltage

IR = 100 μA120

V

VF

Forward Voltage

IF = 100 mA

1.00

V

IF = 200 mA

1.25

IR

Reverse Current

VR = 100 V

0.1

μA

VR = 100 V, TA = 150°C

100

CT

Total Capacitance

VR = 0, f = 1.0 MHz

5.0

pF

trr

Reverse Recovery Time

IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100 Ω

50

ns