BUL128D-B

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

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STMicroelectronics PREFERRED

SALESTYPE

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NPN TRANSISTOR

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HIGH VOLTAGE CAPABILITY

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LOW SPREAD OF DYNAMIC PARAMETERS

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MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

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VERY HIGH SWITCHING SPEED

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INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS:

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ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

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FLYBACK AND FORWARD SINGLE

TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

®

INTERNAL SCHEMATIC DIAGRAM

November 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

700

V

400

V

9

V

Collector Current

4

A

8

A

Base Current

2

A

4

A

W

St orage Temperature

-65 to 150

Max. Operat ing Junction Temperat ure

150

1

2

3

TO-220

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