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ST10F271Z1 데이터시트(PDF) 169 Page - STMicroelectronics

부품명 ST10F271Z1
상세설명  16-bit MCU with 128 Kbyte Flash memory and 12 Kbyte RAM
PDF  185 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST10F271Z1
Electrical characteristics
169/185
1.
RW-delay and tA refer to the next following bus cycle.
2.
Read data are latched with the same clock edge that triggers the address change and the rising RD edge.
Therefore address changes before the end of RD have no impact on read cycles.
3.
Partially tested, guaranteed by design characterization.
t38
CC
ALE falling edge to latched
CS
– 4 – tA
6 – tA
– 4 – tA
6 – tA
ns
t39
SR
Latched CS low to valid data
In
–
16.5 +
+ tC + 2tA
–
3TCL – 21 +
+ tC + 2tA
ns
t41
CC
Latched CS hold after RD,
WR
2 + tF
–
TCL – 10.5 + tF
–ns
t82
CC
Address setup to RdCS,
WrCS
(with RW-delay)
14 + 2tA
–
2TCL – 11 + 2tA
–ns
t83
CC
Address setup to RdCS,
WrCS
(no RW-delay)
2 + 2tA
–
TCL –10.5 + 2tA
–ns
t46
SR
RdCS to valid data in
(with RW-delay)
–4 + tC
–
2TCL – 21 + tC
ns
t47
SR
RdCS to valid data in
(no RW-delay)
–16.5 + tC
–
3TCL – 21 + tC
ns
t48
CC
RdCS, WrCS low time
(with RW-delay)
15.5 + tC
–
2TCL – 9.5 + tC
–ns
t49
CC
RdCS, WrCS low time
(no RW-delay)
28 + tC
–
3TCL – 9.5 + tC
–ns
t50
CC
Data valid to WrCS
10 + tC
–
2TCL – 15 + tC
–ns
t51
SR
Data hold after RdCS
0–
0
–
ns
t53
SR
Data float after RdCS
(with RW-delay) 3
–
16.5 + tF
–
2TCL – 8.5 + tF
ns
t68
SR
Data float after RdCS
(no RW-delay) 3
–4 + tF
–
TCL – 8.5 + tF
ns
t55
CC
Address hold after
RdCS, WrCS
– 8.5 + tF
–
– 8.5 + tF
–ns
t57
CC
Data hold after WrCS
2 + tF
–
TCL – 10.5 + tF
–ns
Table 79.
Demultiplexed bus timings (continued)
Symbol
Parameter
FCPU = 40 MHz
TCL = 12.5 ns
Variable CPU clock
1/2 TCL = 1 to 64 MHz
min.
max.
min.
max.



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