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CSD23382F4.B 데이터시트(PDF) 6 Page - Texas Instruments |
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CSD23382F4.B 데이터시트(HTML) 6 Page - Texas Instruments |
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6 / 14 page ![]() 5.3 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 0.01 0.1 1 10 100 0.01 0.1 1 10 50 − VDS - Drain-to-Source Voltage (V) 100us 1ms 10ms 100ms DC G001 Single Pulse Typ RθJA = 245°C/W Figure 5-10. Maximum Safe Operating Area 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 −50 −25 0 25 50 75 100 125 150 175 TA - AmbientTemperature (ºC) G001 Figure 5-11. Maximum Drain Current vs Temperature CSD23382F4 SLPS453E – MAY 2014 – REVISED JANUARY 2022 www.ti.com 6 Submit Document Feedback Copyright © 2022 Texas Instruments Incorporated Product Folder Links: CSD23382F4 |
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