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BUL810 데이터시트(PDF) 1 Page - STMicroelectronics |
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BUL810 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() BUL810 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s LOW BASE-DRIVE REQUIREMENTS s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC APPLICATIONS s ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM March 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCES Collect or-Emitt er Voltage (VBE = 0) 1000 V VCEO Collect or-Emitt er Voltage (IB = 0) 450 V VEBO Emitt er-Base Voltage (IC =0) 9 V IC Collect or Current 15 A ICM Collect or Peak Current (tp <5 ms) 22 A IB Base Current 5 A IBM Base Peak Current (tp <5 ms) 10 A Ptot Total Dissipation at Tc =25 oC 125 W Tstg St orage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-218 1/6 |
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