LM431

SNVS020H – MAY 2000 – REVISED JANUARY 2016

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

Cathode voltage

37

V

Reference voltage

–0.5

V

Continuous cathode current

–10

150

mA

Reference input current

10

mA

TO-92 package

0.78

W

Internal power

SOIC package

0.81

W

dissipation(3)(4)

SOT-23 package

0.28

W

Industrial (LM431xI)

–40

85

°C

Operating temperature

Commercial (LM431xC)

0

70

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

TJ Max = 150°C.

(4)

Ratings apply to ambient temperature at 25°C. Above this temperature, derate the TO-92 at 6.2 mW/°C, the SOIC at 6.5 mW/°C, the

SOT-23 at 2.2 mW/°C.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Cathode voltage

VREF

37

V

Cathode current

1

100

mA

6.4 Thermal Information

LM431

THERMAL METRIC(1)

D (SOIC)

DBZ (SOT-23)

LP (TO-92)

UNIT

8 PINS

3 PINS

3 PINS

RθJA

Junction-to-ambient thermal resistance

126.9

267.7

162.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

72.2

138.3

85.8

°C/W

RθJB

Junction-to-board thermal resistance

67.5

61

—

°C/W

ψJT

Junction-to-top characterization parameter

21.1

21.5

29.4

°C/W

ψJB

Junction-to-board characterization parameter

67

60.1

141.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

—

—

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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