Nexperia

PIMC31PA

50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

[1]

-

-

348

K/W

[2]

-

-

228

K/W

[3]

-

-

246

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[4]

-

-

172

K/W

Per device

[1]

-

-

250

K/W

[2]

-

-

167

K/W

[3]

-

-

179

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[4]

-

-

125

K/W

[1] Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35μm copper, tin-plated; mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated; mounting pad for collector 1 cm2.

aaa-037257

10

1

102

103

Zth(j-a)

(K/W)

10-1

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

duty cycle = 1

0

0.01

0.02

0.75

0.50

0.33

0.20

0.10

0.05

FR4 PCB, single-sided, 35μm copper, tin-plated and standard footprint

Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PIMC31PA

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

31 August 2023

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