BULT118D datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

2.77

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =700 V

Tj =125

o C

100

500

µA

VEBO

Emitt er-Base Voltage

IE =10 mA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

IC = 100 mA

L = 25 mH

400

ICEO

Collect or-Emitter

Leakage Current

VCE =400 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

0.5

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

1.0

1.2

1.3

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

IC =0.5 A

VCE =5 V

IC =2 A

VCE =5 V

RESI STIVE LO AD

Rise Time

St orage Time

Fall T ime

VCC =125 V

IC =1 A

IB1 =0.2 A

IB2 =-0.2 A

0.4

3.2

0. 25

0.7

4.5

0.4

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =1 A

IB1 =0.2 A

VBE = -5V

L= 50 mH

Vcla mp = 300 V

0.8

0. 16

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BULT118D

2/7

BULT118D 데이터시트(PDF) 2 Page - STMicroelectronics

BULT118D 데이터시트(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

데이터시트 다운로드

링크 URL