| 전자부품 데이터시트 검색엔진 |
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LPV511 데이터시트(PDF) 18 Page - Texas Instruments |
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LPV511 데이터시트(HTML) 18 Page - Texas Instruments |
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18 / 26 page ![]() 18 LPV511 SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016 www.ti.com Product Folder Links: LPV511 Submit Documentation Feedback Copyright © 2005–2016, Texas Instruments Incorporated 9 Power Supply Recommendations The LPV80x is specified for operation from 1.6 V to 5.5 V (±0.8 V to ±2.75 V) over a –40°C to 125°C temperature range. Parameters that can exhibit significant variance with regard to operating voltage or temperature are presented in the Electrical Characteristics: 3 V. CAUTION Supply voltages larger than 13.2 V can permanently damage the device. For proper operation, the power supplies bust be properly decoupled. For decoupling the supply lines it is suggested that 100 nF capacitors be placed as close as possible to the operational amplifier power supply pins. For single supply, place a capacitor between V+ and V– supply leads. For dual supplies, place one capacitor between V+ and ground, and one capacitor between V– and ground. Low bandwidth nanopower devices do not have good high frequency (> 1 kHz) AC PSRR rejection against high- frequency switching supplies and other 1 kHz and above noise sources, so extra supply filtering is recommended if kilohertz or above noise is expected on the power supply lines. 10 Layout 10.1 Layout Guidelines • The V+ pin should be bypassed to ground with a low-ESR capacitor. • The optimum placement is closest to the V+ and ground pins. • Take care to minimize the loop area formed by the bypass capacitor connection between V+ and ground. • The ground pin should be connected to the PCB ground plane at the pin of the device. • The feedback components should be placed as close to the device as possible minimizing strays. 10.2 Layout Example Figure 31. SOT-23 Layout Example |
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