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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DHG40C600HB 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DHG40C600HB 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Diode DHG40C600HB www.iscsemi.com 1 FEATURES · Very Low Leakage Current · Very Short Recovery Time · Improved Thermal Behaviour APPLICATIONS · Uninterruptible Power Supplies (UPS) · Freewheeling Diode · Rectifiers in Switch Mode Power Supplies (SMPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 20×2 A IFSM Non-repetitive Peak Surge Current (t= 10ms, 50Hz, sine) 150 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per Diode 0.9 ℃ /W |
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