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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DPG30C200PB 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DPG30C200PB 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Diode DPG30C200PB www.iscsemi.com 1 FEATURES · Very Low Leakage Current · Very Short Recovery Time · Improved Thermal Bahaviour APPLICATIONS · Uninterruptible Power Supplies (UPS) · Freewheeling Diode · Rectifiers in Switch Mode Power Supplies (SMPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 15×2 A IFSM Non-repetitive Peak Surge Current (t= 10ms, 50Hz, sine) 240 A TJ Max. Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per Diode 1.7 ℃ /W 3 2 1 TO-220C Package 1 3 2 Pin 1 Anode 2 Cathode 3 Anode |
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