BYT08PI-400 datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

1E-3

1E-2

1E-1

1E+0

0.1

0.2

0.5

1.0

tp(s)

K=[Zth(j-c)/Rth(j-c)]

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 5: Relative variation of thermal impedance

junction to case versus pulse duration.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.1

1.0

10.0

100.0

VFM(V)

IFM(A)

Typical values

Tj=100°C

Tj=25°C

Tj=100°C

Fig. 6: Forward voltage drop versus forward

current (maximum values, per diode).

100

200

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 7: Junction capacitance versus reverse

voltage applied (typical values, per diode).

100

200

100

150

200

250

dIF/dt(A/µs)

Qrr(nC)

IF=IF(av)

90% confidence

Tj=100°C

Fig. 8: Recovery charges versus dIF/dt (per diode).

100

200

IRM(A)

IF=IF(av)

90% confidence

Tj=100°C

dIF/dt(A/µs)

Fig. 9: Recovery current versus dIF/dt (per diode).

100

200

300

400

500

VFP(V)

IF=IF(av)

90% confidence

Tj=100°C

dIF/dt(A/µs)

Fig. 10: Transient peak forward voltage versus

dIF/dt (per diode)

BYT08P-400 / BYT08PI-400

4/7

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