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MB85R256F 데이터시트(PDF) 11 Page - RAMXEED LIMITED |
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MB85R256F 데이터시트(HTML) 11 Page - RAMXEED LIMITED |
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11 / 21 page ![]() MB85R256F DS501-00011-9v1-E 11 ESD AND LATCH-UP • Current method of Latch-Up Resistance Test Note : The voltage VIN is increased gradually and the current IIN of 300 mA at maximum shall flow. Confirm the latch up does not occur under IIN 300 mA. In case the specific requirement is specified for I/O and IIN cannot be 300 mA, the voltage shall be increased to the level that meets the specific requirement. Test DUT Value ESD HBM (Human Body Model) JESD22-A114 compliant MB85R256FPFCN-G-BNDE1 |2000 V| ESD MM (Machine Model) JESD22-A115 compliant |200 V| ESD CDM (Charged Device Model) JESD22-C101 compliant |1000 V| Latch-Up (I-test) JESD78 compliant Latch-Up (Vsupply overvoltage test) JESD78 compliant Latch-Up (Current Method) Proprietary method |300 mA| Latch-Up (C-V Method) Proprietary method A VDD VSS DUT V IIN VIN + - Test terminal Protection Resistor VDD (Max.Rating) Reference terminal |
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