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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TSZ151 데이터시트(PDF) 18 Page - STMicroelectronics |
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TSZ151 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 39 page  Figure 32. Step overshoot vs. load capacitance 100p 1n 10n 100n -100 -80 -60 -40 -20 0 20 40 60 80 100 Capacitive Load (F) A = 0.01Vpp A = 0.1Vpp A = 1Vpp Vcc = 5V, G = 1, Rl = 10k W, T = 25°C Rising edge Falling edge Figure 33. Small step overshoot vs. load capacitance and Riso 100p 1n 10n 100n -100 -80 -60 -40 -20 0 20 40 60 80 100 Capacitive Load (F) RISO = 0 W RISO = 50 W Vcc = 5V, G = 1, Rl = 10k W, T = 25°C Vin = 0.1Vpp Figure 34. Small step overshoot vs. Riso 1 10 100 1k -100 -80 -60 -40 -20 0 20 40 60 80 100 Riso (Ω) Cl = 100pF Cl = 1nF Cl = 10nF Vcc = 5V, G = 1, Rl = 10k W, T = 25°C Vin = 0.1Vpp Rising edge Falling edge Figure 35. Small step settling time vs. Riso 1 10 100 1k 100n 1µ 10µ 100µ pos neg Riso (Ω) Vcc = 5V, G = 1, Rl = 10k W, T = 25°C Vin = 0.1Vpp Settling time condition is 2% of Vin Cl = 10nF Cl = 1nF Cl = 100pF TSZ151, TSZ152 Typical performance characteristics DS14459 - Rev 4 page 18/39 |
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