| 전자부품 데이터시트 검색엔진 |
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HS0-117RH/SAMPLE 데이터시트(PDF) 10 Page - Renesas Technology Corp |
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HS0-117RH/SAMPLE 데이터시트(HTML) 10 Page - Renesas Technology Corp |
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10 / 16 page ![]() HS-117RH, HS-117EH FN4560 Rev.11.01 Page 10 of 15 Aug 12, 2025 When developing circuits using the HS-117, test thermal performance and limitations to ensure acceptable performance. As with all tabbed packaged devices, flange mounting to a thermal heat-sink is recommended for the TO-257AA best practices. T0-257AA Package Characteristics Weight of Packaged Device 4.50g (Typical) Case Characteristics Finish: Gold Potential: Unbiased T0-39 Package Characteristics Weight of Packaged Device 0.91g (Typical) Case Characteristics Finish: Steel, Gold Potential: Unbiased SMD.5 CLCC Package Characteristics Weight of Packaged Device 0.91g (Typical) Case Characteristics Finish: Gold, Ceramic Potential: Unbiased Die Characteristics Die Dimensions 2616µm x 2794µm (103 mils x 110 mils) Thickness: 483µm ±25µm (19 mils ±1 mil) Interface Materials GLASSIVATION Type: PSG Thickness: 8kÅ ± 1kÅ TOP METALLIZATION Type: Al/Cu/Si (98.75%/0.5%/0.75%) Thickness: 16kÅ BACKSIDE FINISH Gold Assembly Related Information SUBSTRATE POTENTIAL Unbiased (DI) Additional Information WORST CASE CURRENT DENSITY < 2 x 105 A/cm2 PROCESS Dielectrically Isolated RH - Si-GATE TRANSISTOR COUNT: 96 |
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