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BQ40Z50RSMT-R1 데이터시트(PDF) 12 Page - Texas Instruments

부품명 BQ40Z50RSMT-R1
상세설명  bq40z50-R1 1-Series, 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager
PDF  56 Pages
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제조업체  TI2 [Texas Instruments]
홈페이지  https://www.ti.com
Logo TI2 - Texas Instruments

BQ40Z50RSMT-R1 데이터시트(HTML) 12 Page - Texas Instruments

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Electrical Characteristics: ADC (continued)
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Offset error(2)
16-bit, Post-calibration, VFS = VREF1
±67
±157
µV
Offset error drift
16-bit, Post-calibration, VFS = VREF1
0.6
3
µV/°C
Gain error
16-bit, –0.1 V to 0.8 x VFS
±0.2%
±0.8%
FSR
Gain error drift
16-bit, –0.1 V to 0.8 x VFS
150
PPM/°C
Effective input resistance
8
M
Ω
(2)
For VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3, VC4–VSS, PACK–VSS, and VREF1/2, the offset error is multiplied by (1/ADC
multiplexer scaling factor (K)).
7.17 Electrical Characteristics: ADC Digital Filter
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Single conversion
31.25
Single conversion
15.63
Conversion time
ms
Single conversion
7.81
Single conversion
1.95
Resolution
No missing codes
16
Bits
With sign, tCONV = 31.25 ms
14
15
With sign, tCONV = 15.63 ms
13
14
Effective resolution
Bits
With sign, tCONV = 7.81 ms
11
12
With sign, tCONV = 1.95 ms
9
10
7.18 Electrical Characteristics: CHG, DSG FET Drive
Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC =
2.2 V to 26 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RatioDSG = (VDSG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V,
2.133
2.333
2.433
10 M
Ω between PACK and DSG
Output voltage
—
ratio
RatioCHG = (VCHG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V,
2.133
2.333
2.433
10 M
Ω between BAT and CHG
VDSG(ON) = VDSG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between
10.5
11.5
12
PACK and DSG, VBAT = 18 V
Output voltage,
V(FETON)
V
CHG and DSG on V
CHG(ON) = VCHG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between
10.5
11.5
12
BAT and CHG, VBAT = 18 V
VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and
–0.4
0.4
Output voltage,
DSG
V(FETOFF)
V
CHG and DSG off
VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG
–0.4
0.4
VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between DSG and PACK, 5.1 k
Ω between DSG
200
500
and CL, 10 MΩ between PACK and DSG
tR
Rise time
µs
VCHG from 0% to 35% VCHG(ON)(TYP), VBAT ≥ 2.2 V, CL =
4.7 nF between CHG and BAT, 5.1 k
Ω between CHG
200
500
and CL, 10 MΩ between BAT and CHG
VDSG from VDSG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF
between DSG and PACK, 5.1 k
Ω between DSG and CL,
40
300
10 M
Ω between PACK and DSG
tF
Fall time
µs
VCHG from VCHG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7
nF between CHG and BAT, 5.1 k
Ω between CHG and
40
200
CL, 10 MΩ between BAT and CHG
12
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