2SC3871 datasheet(1/3 Pages) PANASONIC

부품명	2SC3871

상세설명	Silicon NPN triple diffusion planar type

PDF	3 Pages

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제조업체	PANASONIC [Panasonic Semiconductor]

홈페이지	http://www.panasonic.com/industrial/

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Power Transistors

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

500

400

7

20

10

5

45

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

2SC3871

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 500V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 5A

IC = 5A, IB = 1A

VCE = 10V, IC = 0.5A, f = 10MHz

IC = 5A, IB1 = 1A, IB2 = –2A,

VCC = 150V

min

400

15

8

typ

25

max

100

1

1.5

0.7

2

0.3

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

유사한 부품 번호 - 2SC3871

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Inchange Semiconductor ...	2SC3871	246Kb / 2P	isc Silicon NPN Power Transistor

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2SC3871 데이터시트(PDF) 1 Page - Panasonic Semiconductor

2SC3871 데이터시트(HTML) 1 Page - Panasonic Semiconductor

유사한 부품 번호 - 2SC3871

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