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STPSC2H12-Y 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STPSC2H12-Y
상세설명  Automotive 1200 V, 2 A power Schottky silicon carbide diode
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STPSC2H12-Y 데이터시트(HTML) 2 Page - STMicroelectronics

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1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)
1200
V
IF(RMS)
Forward rms current
10
A
IF(AV)
Average forward current
Tc = 160 °C, DC (1)
Tc = 120 °C, DC (1)
2
5
A
IFRM
Repetitive peak forward current
Tc = 160 °C, Tj = 175 °C, δ = 0.1, fw > 10 kHz
9
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal, Tc = 25 °C
15
A
tp = 10 ms sinusoidal, Tc = 150 °C
13
Tstg
Storage temperature range
-65 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
1. Value based on Rth(j-c)max.
Table 2. Thermal resistance parameters
Symbol
Parameter
Value
Unit
Typ.
Max.
Rth(j-c)
Junction to case
1.9
2.7
°C/W
For more information, please refer to the following application note:
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR (1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
1
12
µA
Tj = 150 °C
-
6
80
VF (2)
Forward voltage drop
Tj = 25 °C
IF = 2 A
-
1.35
1.50
V
Tj = 150 °C
-
1.75
2.25
1. Pulse test: tp = 10 ms, δ < 2%
2. Pulse test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.12 x IF(AV) + 0.565 x IF 2(RMS)
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
STPSC2H12-Y
Characteristics
DS13118 - Rev 1
page 2/10



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