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SGSF324 데이터시트(PDF) 1 Page - STMicroelectronics |
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SGSF324 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 6 page ![]() SGSF324 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s VERY HIGH SWITCHING SPEED APPLICATIONS: s SWITCH MODE POWER SUPPLIES DESCRIPTION The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. INTERNAL SCHEMATIC DIAGRAM September 1997 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Un it VCES Collect or-Emitter Volt age (VBE = 0) 1200 V VCEO Collect or-Emitter Volt age (IB = 0) 600 V VEBO Emitter-Base Volt age (IC =0) 7 V IC Collect or Current 4 A ICM Collect or Peak Current (tp <5 ms) 8 A IB Base Current 3 A IBM Base Peak Current (tp <5 ms) 6 A Ptot T otal Dissipation at Tc =25 oC70 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction T emperature 150 oC 1 2 3 TO-220 1/6 |
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