| 전자부품 데이터시트 검색엔진 |
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BYW98-200 데이터시트(PDF) 4 Page - STMicroelectronics |
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BYW98-200 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 5 page ![]() 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 IRM(A) IF=3A 90% confidence Tj=100°C Tj=25°C Tj=100°C dIF/dt(A/µs) Fig. 8: Peak reverse recovery current versus dIF/dt. 1 10 100 0 20 40 60 80 100 trr(ns) IF=3A 90% confidence Tj=100°C Tj=25°C Tj=100°C dIF/dt(A/µs) Fig. 7: Reverse recovery time versus dIF/dt. 25 50 75 100 125 150 100 150 200 250 % IRM Qrr trr IF=3A dIF/dt=50A/µs VR=30V Tj(°C) Fig. 9: Dynamic parameters versus junction temperature. BYW98-200 4/5 |
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