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Electrical ratings

Table 1. Absolute maximum ratings (at TC = 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate-source voltage

±20

V

ID(1)

Drain current (continuous) at TC = 25 °C(2)

672

A

Drain current (continuous) at TC = 100 °C(2)

475

Drain current (continuous) at TC = 25 °C(3)

200

IDM(1)(2)(4)

Drain current (pulsed), tp = 10 µs

2688

A

PTOT

Total power dissipation at TC = 25 °C

390

W

IAS

Single pulse avalanche current (pulse width limited by TJ max.)

90

A

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = 90 A, RGmin = 25 Ω)

1779

mJ

TJ

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

°C

1. Specified by design, not tested in production.

2. This is the theoretical current value only related to the silicon.

3. This current value is limited by package.

4. Pulse width is limited by safe operating area.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJA(1)

Thermal resistance, junction-to-ambient (on 2s2p FR-4 board vertical in still area)

13.8

°C/W

RthJC

Thermal resistance, junction-to-case

0.39

°C/W

1. Defined according to JEDEC standards (JESD51-5, -7).

STK615N4F8AG

Electrical ratings

DS14222 - Rev 5

page 2/15