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STM32L151VD 데이터시트(PDF) 29 Page - STMicroelectronics

부품명 STM32L151VD
상세설명  Ultra-low-power 32-bit MCU ARM® Cortex®-M3, 384KB Flash, 48KB SRAM, 12KB EEPROM, LCD, USB, ADC, DAC, memory I/F
PDF  154 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM32L151VD 데이터시트(HTML) 29 Page - STMicroelectronics

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DocID022027 Rev 11
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STM32L151xD STM32L152xD
Functional overview
57
The operational amplifiers feature:
Low input bias current
Low offset voltage
Low-power mode
Rail-to-rail input
3.14
Ultra-low-power comparators and reference voltage
The STM32L151xD and STM32L152xD devices embed two comparators sharing the same
current bias and reference voltage. The reference voltage can be internal or external
(coming from an I/O).
One comparator with fixed threshold
One comparator with rail-to-rail inputs, fast or slow mode. The threshold can be one of
the following:
DAC output
External I/O
Internal reference voltage (VREFINT) or a sub-multiple (1/4, 1/2, 3/4)
Both comparators can wake up from Stop mode, and be combined into a window
comparator.
The internal reference voltage is available externally via a low-power / low-current output
buffer (driving current capability of 1 µA typical).
3.15
System configuration controller and routing interface
The system configuration controller provides the capability to remap some alternate
functions on different I/O ports.
The highly flexible routing interface allows the application firmware to control the routing of
different I/Os to the TIM2, TIM3 and TIM4 timer input captures. It also controls the routing of
internal analog signals to ADC1, COMP1 and COMP2 and the internal reference voltage
VREFINT.
3.16
Touch sensing
The STM32L151xD and STM32L152xD devices provide a simple solution for adding
capacitive sensing functionality to any application. These devices offer up to 34 capacitive
sensing channels distributed over 11 analog I/O groups. Both software and timer capacitive
sensing acquisition modes are supported.
Capacitive sensing technology is able to detect the presence of a finger near a sensor which
is protected from direct touch by a dielectric (glass, plastic...). The capacitive variation
introduced by the finger (or any conductive object) is measured using a proven
implementation based on a surface charge transfer acquisition principle. It consists of
charging the sensor capacitance and then transferring a part of the accumulated charges
into a sampling capacitor until the voltage across this capacitor has reached a specific
threshold. The capacitive sensing acquisition only requires few external components to



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