| 전자부품 데이터시트 검색엔진 |
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C20 데이터시트(PDF) 3 Page - STMicroelectronics |
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C20 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() MICROMODULES 3/13 Table 3. Manufacturing Flow and Manufacturing Facility Locations Table 4. Material Specification Operation Location and Facility Wafer Diffusion Rousset, France. 6” wafer fab. Agrate, Italy. 6” wafer fab.: standard EEPROM only Electrical Wafer Test Rousset, France. Agrate, Italy: standard EEPROM only Assembly Casablanca, Morocco. Final Test Rousset, France. Casablanca, Morocco. Material Description Tape Basic material MCTS T2 or IBIDEN rough, typical thickness 120 µm Adhesive Modified epoxy, typical thickness 18 µm Laminated copper foil Typical thickness 35 µm Adhesive strength > 0.8 N/mm at room temperature. Monitored by the tape manufacturer using appropriate test methods Tape Surface The whole epoxy adhesive surface is controlled to be free of dirt, grease, cleaning compounds and parting compounds Surface roughness Typically Rz: 3-12 µm at first accepted delivery Contact surface Nickel-gold, galvanised treatment Nickel thickness 2 µm (min.) Gold thickness contact side, 0.1 µm (min.) Total tape thickness 160 ± 30 µm Control, Palmer “Special flat” diameter 3 mm, F = 1.5 N Chip Interconnect Dice bonding Silver epoxy Bonding wire Gold 25 µm Ring (D22 only) Bronze Protective coating Material UV epoxy, Black epoxy Assembly Casablanca, Morocco. |
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