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VNH2SP30-E 데이터시트(PDF) 23 Page - STMicroelectronics |
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VNH2SP30-E 데이터시트(HTML) 23 Page - STMicroelectronics |
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23 / 35 page ![]() DocID10832 Rev 10 23/35 VNH2SP30-E Application information 34 The device sustains no more than -30 A in reverse battery conditions because of the two body diodes of the power MOSFETs. Additionally, in reverse battery condition the I/Os of the VNH2SP30-E are pulled down to the VCC line (approximately -1.5 V). A series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the maximum target reverse current through µC I/Os, the series resistor is: Figure 34. Half-bridge configuration Note: The VNH2SP30-E can be used as a high power half-bridge driver achieving an On resistance per leg of 9.5 mΩ. Figure 35. Multi-motor configuration Note: The VNH2SP30-E can easily be designed in multi-motor driving applications such as seat positioning systems where only one motor must be driven at a time. The DIAGX/ENX pins allow the unused half-bridges to be put into high impedance. M OUTA OUTA OUTB OUTB VCC PWM DIAGA/ENA INA DIAGB/ENB INB GNDB GNDA GNDB GNDA PWM DIAGA/ENA INA DIAGB/ENB INB M2 OUTA OUTA OUTB OUTB VCC PWM DIAGA/ENA INA DIAGB/ENB INB GNDB GNDA GNDB GNDA PWM DIAGA/ENA INA DIAGB/ENB INB M1 M3 |
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