5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)

MIN

MAX

UNIT

VS

Supply voltage, VS = (V+) – (V–)

12

V

Signal input terminals

Voltage(2)

(V–) – 0.5

(V+) + 0.5

V

Current(2)

±10

mA

Output short-circuit(3)

Continuous

TA

Operating temperature

–40

85

°C

TJ

Junction temperature

150

°C

Tstg

Storage temperature

–55

125

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2)

Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails

should be current-limited to 10mA or less.

(3)

Short-circuit to ground, one amplifier per package.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS

Supply voltage

±2.4

±5.5

V

TA

Specified temperature

–5

75

°C

Operating temperature

–40

85

°C

5.4 Thermal Information

THERMAL METRIC(1)

LOG114

UNIT

RGV (VQFN)

16 PINS

RθJA

Junction-to-ambient thermal resistance

46.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

42.9

°C/W

RθJB

Junction-to-board thermal resistance

21.8

°C/W

ψJT

Junction-to-top characterization parameter

1.1

°C/W

ψJB

Junction-to-board characterization parameter

21.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

6.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

LOG114

SBOS301B – MAY 2004 – REVISED MARCH 2025

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