| 전자부품 데이터시트 검색엔진 |
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EMIF09-02726S3 데이터시트(PDF) 2 Page - STMicroelectronics |
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EMIF09-02726S3 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() Symbol Parameter Value Unit VPP Maximum electrostatic discharge in following measurement conditions: MIL STD 883C - METHOD 3015-6 IEC1000-4-2 - air discharge IEC1000-4-2 - contact discharge 25 16 9 kV PPP Peak pulse power (8/20 µs) 200 W Tstg Tj Storage temperature range Junction temperature - 55 to + 150 150 °C °C TOP Operating temperature range - 40 to + 85 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) V I VF V RM PP I RM I F I Slope = 1 / Rd V BR V CL Symbol Parameter VRM Stand-offvoltage VBR Breakdown voltage VCL Clamping voltage VF Forward voltage drop CIN Input capacitance per line Rd Dynamic impedance IRM Leakage current IPP Peak pulse current Symbol Test conditions Min. Typ. Max. Unit IRM VRM = 5.25 V, between any I/O pin and GND 20 µA VBR IR = 1 mA, between any I/O pin and GND 6.1 7.2 V VF IF = 200 mA, between any I/O pin and GND 1.25 V Rd IPP =15 A, tp = 2.5 µs (note 2) 0.3 Ω C 0V bias VRMS = 30mV F = 1MHz (note 3) 130 pF Note 1: VCL corresponds to the voltage level seen at the output pin Note 2: Rd is given per diode Note 3: C is given per diode EMIF09-02726Sx 2/12 |
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