STPS10L40C_V01 datasheet(3/12 Pages) STMICROELECTRONICS

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STPS10L40C

Characteristics

DocID9433 Rev 7

3/12

1.1

Characteristics (curves)

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus ambient

temperature (δ = 0.5, per diode)

Figure 3: Normalized avalanche power derating

versus pulse duration (Tj = 125 °C)

Figure 4: Relative variation of thermal impedance

junction to case versus pulse duration

Figure 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

Figure 6: Junction capacitance versus reverse

voltage applied (typical values, per diode)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

= tp/T

= 0.05

= 0.5

= 0.2

= 0.1

PF(AV)(W)

IF(AV)(A)

100

125

150

= tp/T

Tamb(°C)

IF(AV)(A)

Rth(j-a) = Rth(j-c)

Rth(j-a) = 15 °C/W

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

= tp/T

t (s )

= 0.5

= 0.2

= 0.1

Zth(j-c)/Rth(j-c)

single pulse

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

IR(mA)

VR(V)

Tj = 150 °C

Tj = 100 °C

Tj = 25 °C

100

1000

C(pF)

VR(V)

F = 1 MHz

OSC

= 30 mV

RMS

= 25 °C

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