OPA2192IDRG4 datasheet(29/61 Pages) TI2

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Power-Supply

ESD Cell

100

VSS

VDD

IN+

TVS

VIN

+VS

±VS

OPA192

OPA192, OPA2192, OPA4192

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SBOS620E – DECEMBER 2013 – REVISED NOVEMBER 2015

8.3.7 Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress

(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the

output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown

characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.

Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from

accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is

helpful. Figure 65 shows an illustration of the ESD circuits contained in the OPAx192 (indicated by the dashed

line area). The ESD protection circuitry involves several current-steering diodes connected from the input and

output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or

the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain

inactive during normal circuit operation.

Figure 65. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application

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OPA2192IDRG4 데이터시트(PDF) 29 Page - Texas Instruments