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STPS30L30DJF 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS30L30DJF 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current PF(AV)(W) 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 IF(AV)(A) T δ =tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Figure 2. Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 Rth(j-a) = Rth(j-c) T δ=tp/T tp Tamb(°C) Figure 3. Normalized avalanche power derating versus pulse duration P (10 µs) ARM P ( p t ) ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 E-05 1. 1.E-04 E-03 1. E-02 1. 1.E-01 E+00 1. tp (s ) Single pulse Figure 5. Reverse leakage current versus reverse voltage applied (typical values) IR(mA) E-02 1. E-01 1. 1.E+00 1.E+01 E+02 1. 1.E+03 0 5 10 15 20 25 30 Tj=150°C Tj=125°C Tj=25°C Tj=100°C Tj=75°C Tj=50°C VR(V) Figure 6. Junction capacitance versus reverse voltage applied (typical values) 1000 F=1MHz VOSC = 30 mV Tj = 25 °C VR(V) C(pF) 10000 100 1 10 100 STPS30L30DJF Characteristics (curves) DS8955 - Rev 2 page 3/9 |
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