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STPS30M60DJF 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STPS30M60DJF
상세설명  60 V, 30 A high efficiency PowerFLAT power Schottky diode
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS30M60DJF 데이터시트(HTML) 3 Page - STMicroelectronics

  STPS30M60DJF Datasheet HTML 1Page - STMicroelectronics STPS30M60DJF Datasheet HTML 2Page - STMicroelectronics STPS30M60DJF Datasheet HTML 3Page - STMicroelectronics STPS30M60DJF Datasheet HTML 4Page - STMicroelectronics STPS30M60DJF Datasheet HTML 5Page - STMicroelectronics STPS30M60DJF Datasheet HTML 6Page - STMicroelectronics STPS30M60DJF Datasheet HTML 7Page - STMicroelectronics STPS30M60DJF Datasheet HTML 8Page - STMicroelectronics STPS30M60DJF Datasheet HTML 9Page - STMicroelectronics  
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1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
PF(AV)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
T
tp
δ=tp/T
IF(AV)(A )
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
T
δ=tp/T
tp
0
5
10
15
20
25
30
35
0
25
50
100
75
125
150
Rth(j-a) = Rth(j-c)
IF(AV)(A)
Tamb(°C)
Figure 3. Normalized avalanche power derating versus
pulse duration
P
(10 µs)
ARM
P
( p
t )
ARM
0.001
0.01
0.1
1
1
10
100
1000
t (µs)
p
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
Zth (j-c)/Rth (j-c)
Single pulse
tp (s )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
E-05
1.
E-04
1.
1.E-03
E-02
1.
E-01
1.
E+00
1.
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values)
E-03
1.
E-02
1.
1.E-01
E+00
1.
1.E+01
E+02
1.
1.E+03
0
5
10
15
20
25
30
35
40
45
50
55
60
IR(mA)
TC = 150 °C
VR(V)
TC = 125 °C
TC = 100 °C
TC = 75 °C
TC = 50 °C
TC = 25 °C
Figure 6. Junction capacitance versus reverse voltage
applied (typical values)
100
1000
10000
1
100
10
VR(V)
C(pF)
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
STPS30M60DJF
Characteristics (curves)
DS9019 - Rev 2
page 3/9



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