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STPS30M60DJF 데이터시트(PDF) 3 Page - STMicroelectronics |
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STPS30M60DJF 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus average forward current 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 PF(AV)(W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T tp δ=tp/T IF(AV)(A ) Figure 2. Average forward current versus ambient temperature (δ = 0.5) T δ=tp/T tp 0 5 10 15 20 25 30 35 0 25 50 100 75 125 150 Rth(j-a) = Rth(j-c) IF(AV)(A) Tamb(°C) Figure 3. Normalized avalanche power derating versus pulse duration P (10 µs) ARM P ( p t ) ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Zth (j-c)/Rth (j-c) Single pulse tp (s ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 E-05 1. E-04 1. 1.E-03 E-02 1. E-01 1. E+00 1. Figure 5. Reverse leakage current versus reverse voltage applied (typical values) E-03 1. E-02 1. 1.E-01 E+00 1. 1.E+01 E+02 1. 1.E+03 0 5 10 15 20 25 30 35 40 45 50 55 60 IR(mA) TC = 150 °C VR(V) TC = 125 °C TC = 100 °C TC = 75 °C TC = 50 °C TC = 25 °C Figure 6. Junction capacitance versus reverse voltage applied (typical values) 100 1000 10000 1 100 10 VR(V) C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C STPS30M60DJF Characteristics (curves) DS9019 - Rev 2 page 3/9 |
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