Characteristics

STPS30M60

2/8

DocID022045 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.39 x IF(AV) + 0.0053 x IF

2

(RMS)

Table 2. Absolute ratings (limiting values at Tamb = 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

60

V

IF(RMS)

Forward rms current

60

A

IF(AV)

Average forward current,

δ = 0.5

Tc = 130 °C

30

A

IFSM

Surge non repetitive forward current

tp = 10 ms sine-wave

450

A

PARM

(1)

Repetitive peak avalanche power

Tj = 125 °C, tp = 10 µs

2470

W

VARM

(2)

Maximum repetitive peak avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 129

80

V

VASM

(2)

Maximum single-pulse peak avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 129

80

V

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(3)

150

°C

1.

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements

and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible

avalanche power of Schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche

specification”.

2.

See Figure 9

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

0.9

°C/W

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

35

165

µA

Tj = 125 °C

-

25

100

mA

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 15 A

-

0.480

0.520

V

Tj = 125 °C

-

0.385

0.435

Tj = 25 °C

IF = 30 A

-

0.545

0.605

Tj = 125 °C

-

0.480

0.550

1.

Pulse test: tp = 5 ms, δ < 2%

2.

Pulse test: tp = 380 µs, δ < 2%

Obsolete

Product(s)

- Obsolete

Product(s)