STPS20H100CFP datasheet(4/18 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current (per diode)

(W)

F(AV)

δ=tp/T

(A)

F(AV)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

Figure 2. Average forward current versus ambient

temperature (δ = 0.5, per diode)

(A)

F(AV)

100

125

150

175

TO-220FPAB

TO-220AB

th(j-a)

th(j-c)

=15°C/W

th(j-a)

=40°C/W

th(j-a)

(°C)

amb

δ=tp/T

Figure 3. Normalized avalanche power derating versus

pulse duration (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Relative variation of thermal impedance junction

to case versus pulse duration

th(j-c)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

t (s)

Single pulse

TO-220AB, D PAK, I PAK

Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

th(j-c)

t (s)

Single pulse

TO-220FPAB

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

I (µA)

100

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

V (V)

T =125°C

T =150°C

T =100°C

T =25°C

STPS20H100C

Characteristics (curves)

DS1216 - Rev 10

page 4/18

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