Characteristics

STPS1545-Y

2/8

DocID023750 Rev 2

1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.42 x IF(AV) + 0.01 IF2(RMS)

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

45

V

IF(RMS) Forward rms current

30

A

IF(AV)

Average forward current δ = 0.5

Tc = 155 °C

15

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

A

IRRM

Peak repetitive reverse current

tp = 2 µs square

F = 1 kHz

1A

IRSM

Non repetitive peak reverse current

tp = 100 µs square

3

A

PARM(1)

1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of Schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

Tj = 125 °C, tp = 10 µs

400

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Operating junction temperature (2)

2.

condition to avoid thermal runaway for a diode on its own heatsink

-40 to + 175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3. Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c) Junction to case

1.6

°C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

Tj = 25 °C

VR =VRRM

-

-

200

µA

Tj = 125 °C

-

11

40

mA

VF(1)

Forward voltage drop

Tj = 125C

IF = 15A

-

0.5

0.57

V

Tj = 25C

IF = 30 A

--

0.84

Tj = 125 °C

IF = 30 A

-

0.65

0.72

dPtot

dTj

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1

Rth j a

–

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