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FZT653TA 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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FZT653TA 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor FZT653TA www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA, IE= 0 120 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA, IB= 0 100 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA, IC= 0 7 -- -- V ICEO Collector Cutoff Current VCB= 100V, IE= 0 -- -- 100 nA IEBO Emitter Cutoff Current VEB= 5V, IC= 0 -- -- 100 nA hFE1 DC Current Gain IC= 50mA, VCE= 2V 70 200 -- hFE2 DC Current Gain IC= 500mA, VCE= 2V 100 200 300 hFE3 DC Current Gain IC= 1A, VCE= 2V 55 110 -- hFE4 DC Current Gain IC= 2A, VCE= 2V 25 55 -- VCE(sat) Collector-Emitter Saturation Voltage IC= 1A, IB= 0.1A -- -- 0.3 V IC= 2A, IB= 0.2A -- -- 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A, IB= 0.1A -- -- 1.25 V VBE(on) Base-Emitter Turn-On Voltage IC= 1A, VCB= 2V -- -- 1.0 V PACKAGE OUTLINE (UNIT: mm) |
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